• Vacuum environment for better control of the heating and protection for indenter and sample against oxidation
• Fully automatic procedure for minimizing thermal drift
• Variable temperature testing from -150 °C to 800 °C
• Vacuum levels down to 10-7 mbar
The UNHT³ ultra-high-resolution nanoindenter with real force and displacement sensors is used to examine the mechanical properties of a material at the nanoscale. UNHT³ virtually eliminates the effect of thermal drift and compliance due to its unique and patented active surface referencing system. Therefore, it is perfectly suited for long-term measurements on all types of materials from the atomic- to the nanoscale, including polymers, very thin layers, and soft tissues.
The most accurate nanoindentation tester
UNHT³ measures what others estimate: two independent depth and load sensors provide true control of forces and indentation depth. In addition, UNHT³ offers the unique patented design of active top referencing: One reference indenter monitors the sample’s surface position while a measuring indenter performs the measurements, eliminating any thermal drift and compliance issues. This unique design allows a large range of indentation depths (from a few nm up to 100 μm) and indentation loads (from a few μN up to 100 mN).
The nanoindenter with the highest stability on the market
The use of the unique patented active top surface referencing and Zerodur, a material with no thermal expansion, means UNHT³ is the only nanoindentation tester to reach a negligible thermal drift down to 10 fm/sec without any depth correction. With this unique stability, UNHT³ is the only nanoindentation tester that can be used for long-time measurements such as creep tests.
High capacity and measurement speed (>600 measurements per hour)
Thanks to the instruments’ unique thermal stability, a sample can be measured immediately after installation without waiting hours for thermal stabilization. Many samples can therefore be individually measured during the day. The Quick Matrix mode offers the possibility to perform more than 600 measurements per hour with real indentation curves. User profiles, measurement protocols, multi-sample measurements, and customizable reporting also contribute to reaching the highest throughput on the market.
Additional dynamic mechanical analysis (DMA) with “Sinus Mode”
The integrated Sinus Mode enables you to perform DMA analysis for depth profiling of mechanical properties (HIT, EIT vs. depth) and measurement of viscoelastic properties (E', E'': storage and loss moduli, tan δ) on samples ranging from thin films to bulk materials. The Sinus Mode also offers additional features, such as quick indenter calibration and stress-strain analysis.
Measurements under high vacuum and high temperatures up to 800 °C
The HTV version of UNHT³ is the only ultra nanoindenter with a fully automatic procedure for minimizing thermal drift which is able to achieve <3 nm/min over the entire temperature range. This is done via the unique and patented heating management which simultaneously controls the sample and indenter temperature with a precision of 0.1°C. The indentation software takes control of the heating and environmental conditions interacting in real-time with the system to minimize thermal drift and launch all the desired measurements. You can plan a set of any kind of indents (also possible with the standard UNHT³) with different temperature steps and the instrument automatically conducts the measurements according to the preset matrix.
Model | UNHT³ HTV |
Maximum load [mN] | 50 / 100(1) |
Load resolution [nN] | 3 |
Load noise floor [rms] [μN] | ≤0.05 |
Loading rate [mN/min] | Up to 1000 |
Depth range [μm] | 50 / 100(1) |
Depth resolution [nm] | 0.003 |
Depth noise floor [rms] [nm] | ≤0.03 |
Data acquisition rate [kHz] | 192 |
Vacuo [mbar] | 10⁷ |
Max temperature | 800 °C |
Options | |
Cooling down to -150 °C (2) | ✔ |
Liquid testing | ✔ |
(1) optional | |
(2) with an environmental chamber |
| |
To get information about: «UNHT³ HTV» contact us by phone (044) 229 15 31 or fill in the form.